Lam Research Enables Next-Generation Memory with Industry's First ALD Process for Low-Fluorine Tungsten Fill

FREMONT, CA--(Marketwired - August 09, 2016) - Lam Research Corp. (NASDAQ: LRCX), an advanced manufacturer of semiconductor equipment, today introduced an atomic layer deposition (ALD) process for depositing low-fluorine-content tungsten films, the latest addition to its industry-leading ALTUS^® family of products. With the industry's first low-fluorine tungsten (LFW) ALD process, the ALTUS Max E Series addresses memory chipmakers' key challenges and enables the continued scaling of 3D NAND and DRAM devices. Building on Lam's market-leading product portfolio for memory applications, the new system is gaining market traction worldwide, winning production positions at leading 3D NAND and DRAM manufacturers and placement at multiple R&D sites.

"Consumer demand for ever more powerful devices is driving the need for high-capacity, high-performance storage, and deposition and etch are key process technology enablers of advanced memory chips," said Tim Archer, Lam's chief operating officer. "With the addition of the ALTUS Max E Series, we are expanding our memory portfolio and enabling our customers to capitalize on this next wave of industry drivers. Over the past twelve months, as the 3D NAND inflection has accelerated, we have doubled our shipments for these applications, leading to the largest deposition and etch installed base in our 3D NAND served markets."

As manufacturers increase the number of memory cell layers for 3D NAND, two issues have become apparent for tungsten deposition in the word line fill application. First, fluorine diffusion from the tungsten film into the dielectrics can cause physical defects. Second, higher cumulative stress in devices with more than 48 pairs has resulted in excessive bowing. The resulting defects and stress can cause yield loss, as well as degraded electrical performance and device reliability. Because of these issues, tungsten films for advanced 3D NAND devices must have significantly reduced fluorine and intrinsic stress. Further, as critical dimensions shrink, resistance scaling becomes more challenging for the DRAM buried word line, as well as for metal gate/metal contact applications in logic devices.