DGAP-News

Dialog Semiconductor Plc.: Dialog Semiconductor Enters Gallium Nitride (GaN) Market with First Integrated Devices Targeting Fast Charging Power Adapters (news with additional features)

DGAP-News: Dialog Semiconductor Plc. / Key word(s): Product
Launch/Conference
Dialog Semiconductor Plc.: Dialog Semiconductor Enters Gallium Nitride (GaN)
Market with First Integrated Devices Targeting Fast Charging Power Adapters
(news with additional features)

25.08.2016 / 08:00
The issuer is solely responsible for the content of this announcement.

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SmartGan(TM) DA8801 providing monolithic integration of GaN power FETS
together with analog drivers and logic in an optimized, highly efficient
650V half-bridge design

London, United Kingdom - August 25, 2016 - Dialog Semiconductor plc
(XETRA:DLG), a provider of highly integrated power management, AC/DC power
conversion, solid state lighting (SSL) and Bluetooth(R) low energy
technology, today announced and is demonstrating its first gallium nitride
(GaN) power IC product offering, using Taiwan Semiconductor Manufacturing
Corporation's (TSMCs) 650 Volt GaN-on-Silicon process technology.

The DA8801 together with Dialog's patented digital Rapid Charge(TM) power
conversion controllers will enable more efficient, smaller, and higher
power density adapters compared to traditional Silicon field-effect
transistor (FET) based designs today. Dialog is initially targeting the
fast charging smartphone and computing adapter segment with its GaN
solutions, where it already enjoys more than 70 percent market share with
its power conversion controllers.

"The exceptional performance of GaN transistors allows customers to deliver
more efficient and compact power adapter designs that meet today's market
demands," said Mark Tyndall, SVP Corporate Development and Strategy, Dialog
Semiconductor. "Following our success in BCD-based power management ICs
(PMICs), as an early GaN innovator, Dialog once again leads the
commercialization of a new power technology into high-volume consumer
applications."

GaN technology offers the world's fastest transistors, which are the core
of high-frequency and ultra-efficient power conversion. Dialog's DA8801
half-bridge integrates building blocks, such as gate drives and level
shifting circuits, with 650V power switches to deliver an optimized
solution that reduces power losses by up to 50 percent, with up to 94
percent power efficiency. The product allows for a seamless implementation
of GaN, avoiding complex circuitry, needed to drive discrete GaN power
switches.

The new technology allows a reduction in the size of power electronics by