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Hallo allen, nur zur Info: "Future Memory MRAM In Time To Come New chip technology unveiled yesterday by Union Semiconductor Technology Corporation has the potential to grab a big slice of the market for short-term memory chips used in a growing number of electronic devices. But analyst`s note that it will take years before Union develops methods to cheaply mass produce the new magnetic random access memory chips, or MRAM. "The technology is good," said Raymond Wu, senior semiconductor analyst at EnTrust Securities. "But new products take time to develop and gain acceptance in the marketplace." The new technology has the potential to supplant chips such as flash and DRAM. But its maker says mass production is three to five years away. According to Union, magnetic random access memory chips provide short-term memory for electronic gadgets such as desktop computers and mobile phones. The company claims that MRAMs can replace six different kinds of chips including flash memory and DRAM. The market potential for MRAM appears appetizing. If the product can replace six different kinds of memory chips as the company claims, MRAM could have an enormous impact on the chip industry. MRAM is the newest technique, concerning the storage of bits for a certain period. One of the most important characteristiques of MRAM, is the fact that it uses the spin of an electron, rather than the charge, to indicate the presence of a "1" or a "0". The MRAM module is a structure of conducting wires, that are weaved in order to obtain a great amount of cross-points. Suppose a current flows through an x-wire, it automatically generates a magnetic field around the wire and so orientates the ferromagnets into a certain direction along with the wire (see the green "block" on the image below). Then there `s also the y direction which makes the ferromagnet turn left or maybe right. So we can conclude that the digital information (represented as 0 and 1) is stored in the alignment of magnetic moments. The resistance of the magnetic component depends on the moment`s alignment. The stored state is read from the element by detecting the component`s resistive state. The final aim is to place those wires in a matrix-structure, in order to construct a memory cell. The matrix has rows and collumns. By measuring the resistance of a certain row, it`s possible to know the bit-sequence. Of course, a row alone, doesn`t give the complete information. To obtain that information, we have to construct "column wires". The combination of columns and rows gives the essential elements to calculate the bit-sequence, that is stored in the matrix. " MfG Russian KGB |
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| aus der Diskussion: | AMD - Auf dem Weg zum Börsenstar - Teil 39 |
| Autor (Datum des Eintrages): | Russian KGB (21.07.00 09:48:52) |
| Beitrag: | 76 von 108 (ID:1372216) |
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