|
Monday September 25, 3:34 am Eastern Time Press Release SST Targets New Dual-Bank Flash Memory Device for Embedded Applications in Internet-Ready Mobile Phones and PDAs New Concurrent SuperFlash and SRAM in an 8 mm x 10 mm BGA Multi-Chip Package is the Industry`s Smallest Footprint SAN JOSE, Calif.--(BUSINESS WIRE)--Sept. 25, 2000-- SST (Silicon Storage Technology, Inc.) (NASDAQ: SSTI - news) today introduced four new members to its ComboMemory(TM) product family that represent the industry`s smallest footprint, concurrent, dual-bank application-specific memory devices on the market. The ComboMemory product family is comprised of 16 Mbit flash memory and 2 Mbit or 4 Mbit static random-access memory (SRAM). The new devices, while incorporating a dual-bank flash memory architecture, allow for concurrent operations between the two internal flash memory banks and the SRAM. Housed in a small, 8 mm x 10 mm Ball Grid Array (BGA) package with stacked-die technology, the new devices are ideal for mobile wireless communications applications such as Bluetooth- and WAP-enabled mobile phones and Internet-based PDAs. The new concurrent ComboMemory devices use SST`s proprietary, high-performance CMOS SuperFlash® technology combined with SST`s low-power SRAM process. A distinguishing feature of SST`s new concurrent ComboMemory devices is that data can be read from either bank while an Erase or Program operation is in progress in the opposite bank. For added design flexibility, the flash memory is partitioned into 4 Mbit and 12 Mbit banks with top or bottom sector protection options for storing critical boot codes and configuration data. As a result, the new concurrent dual-bank flash memory and SRAM architecture provides a new level of flexibility to designers, who can now take advantage of the device`s built-in ability to perform multiple concurrent functions. In particular, the applications for SST`s new concurrent ComboMemory devices include portable WAP-enabled phones and Internet-ready mobile phones for accessing personal information such as movie listings, directions and weather information; mobile phones that enable audio recording simultaneously while talking; and handheld appliances such as PDAs that can access the Internet. ``Our new concurrent ComboMemory products provide a low-power solution for a wide range of wireless communications applications that require a flexible, built-in ability to perform multiple concurrent operations,`` said Eugene Feng, director of marketing at SST. ``Our customers will be pleased with the small footprint of our new concurrent ComboMemory products, as well as the superior reliability and manufacturing advantages that our SuperFlash technology offers.`` Because of SST`s SuperFlash technology, the concurrent ComboMemory devices are less susceptible to the effects of electromagnetic interference (EMI) and have a higher tolerance to the overall system`s output of EMI. For portable wireless communication devices such as WAP-enabled and Internet-ready mobile phones and Bluetooth modules, high tolerance of EMI is critical. The new concurrent ComboMemory devices are also ideal for mobile wireless applications that require low power consumption. SST`s new devices offer a typical low standby current of only 6 microamperes, resulting in an extension in battery life -- an important requirement for designers of portable electronic products. SST`s ComboMemory devices are designed to reduce space by replacing as many as three individual components (flash, SRAM and EEPROM) in traditional cellular phone applications. This results in significant cost, space and power savings, all of which are critical requirements for today`s portable wireless communication devices. The new 8 mm x 10 mm BGA package allows system designers to reduce the overall size of their designs, resulting in an even smaller form factor. In addition to lower power and cost benefits, SST`s ComboMemory products also offer other advantages over discrete solutions. Like all members of SST`s ComboMemory family, the new devices incorporate the SoftPartition(TM) architecture, which allows system designers to seamlessly partition the data and program code into small, granular 1 KWord sectors. This small, uniform sector size gives designers more flexibility by allowing them to balance the amount of memory used for code and data storage depending on the application. Key Features of New Concurrent ComboMemory Products -- Dual-Bank Architecture for Concurrent Read and Write Operation -- 16 Mbit Bottom Sector Protection Devices - SST34HF1621: 12 Mbit + 4 Mbit - SST34HF1641: 12 Mbit + 4 Mbit -- 16 Mbit Top Sector Protection Devices - SST34HF1622: 4 Mbit + 12 Mbit - SST34HF1642: 4 Mbit + 12 Mbit -- SRAM Organization: -- 2 Mbit: 256K x 8 or 128K x 16 -- 4 Mbit: 512K x 8 or 256K x 16 -- Single 2.7-3.3V Read and Write Operation -- Dual-Bank Architecture for Concurrent Read and Write Operation -- Read data from either bank while an Erase or Program operation is in progress in the opposite bank -- Flexible, Uniform Sector Architecture -- 1 KWord sector erase capability -- Low Power Consumption -- Active current: 25 milliamperes (typical) -- Standby current: 6 microamperes (typical) -- Auto Low Power Mode: 6 microamperes (typical) -- Fast Read Access Speeds -- Flash: 70 nanoseconds and 90 nanoseconds; SRAM: 70 nanoseconds and 90 nanoseconds -- Fast Sector Erase and Word Program -- Sector erase time: 18 milliseconds (typical) -- Block erase time: 18 milliseconds (typical) -- Chip erase time: 70 milliseconds (typical) -- Word program time: 14 microseconds (typical) -- Fast Chip Rewrite Time -- 8 seconds (typical) -- Superior reliability with SST`s SuperFlash technology -- 100,000 cycles endurance (typical) and greater than 100 years of data retention -- Small footprint and thin plastic Ball Grid Array package for maximum space-saving -- 56-ball LFBGA (8 mm x 10 mm) Pricing and Availability New Additions to SST`s ComboMemory Product Family Part number Price Sampling Volume Package (in 100K unit Production quantities) SST34HF1621 $12.00 Now October 56-ball LFBGA 2000 (8 mm x 10 mm) SST34HF1622 $12.00 Now October 56-ball LFBGA 2000 (8 mm x 10 mm) SST34HF1641 $17.00 November January 56-ball LFBGA 2000 2001 (8 mm x 10 mm) SST34HF1642 $17.00 November January 56-ball LFBGA 2000 2001 (8 mm x 10 mm) Guß S_H |
|
| aus der Diskussion: | Silicon Storage (2) Flash - Memory Speicher |
| Autor (Datum des Eintrages): | Spanischer_Hund (25.09.00 14:19:53) |
| Beitrag: | 77 von 140 (ID:1916820) |
| Alle Angaben ohne Gewähr © wallstreetONLINE | |