Alpha and Omega Semiconductor Releases New 1200V αSiC MOSFETs

Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL) a designer, developer and global supplier of a broad range of power semiconductors and power ICs, today announced the release of the new 1200V silicon carbide (SiC) αSiC MOSFET technology platform. Specifically targeting the industrial and automotive market, this next-generation technology will enable customers to achieve higher levels of efficiency and power density compared to existing silicon solutions.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20200519005255/en/

New 1200V Silicon Carbide (SiC) (Graphic: Business Wire)

Optimized for minimizing both AC and DC power losses through a low gate resistance (R_G) design combined with the low increase in on-resistance (R_DS,ON) over temperature, the αSiC technology can achieve the highest efficiencies across a wide range of application switching frequencies and temperatures. This higher efficiency can result in significantly reduced system costs and total bill-of-materials for the many industrial uses, including solar inverters, UPS systems, and EV inverter and charging systems.

The first product release for this new platform is the AOK065V120X2, a 1200V 65mΩ SiC MOSFET available in a TO-247-3L package. For ease of use, the AOK065V120X2 is designed to be driven with a -5V/+15V gate drive, allowing the broadest compatibility with existing high voltage IGBT and SiC gate drivers. Operation with a unipolar drive is also possible with optimized system design. Additional benefits of the αSiC platform is a robust UIS capability, enhanced short circuit performance, and a high maximum operating temperature of 175^oC.

“After years of development work, we are excited to add this new next-generation SiC MOSFET technology to Alpha and Omega’s existing class-leading Si MOSFET and IGBT portfolio. Adding to our previously released 650V GaN platform, the αSiC devices further expand our positioning for the projected multi-billion dollar wide bandgap power semiconductor market. We are committed to providing the optimal technology solution for each customer’s needs,” said David Sheridan, Sr. Director of Wide Bandgap Products at AOS.

The αSiC MOSFET portfolio will expand later this year to include a broader range of on-resistance and additional package options with full AEC-Q101 qualification.

Pricing and Availability

As part of the first wave release, the AOK065V120X2 (1200V 65mOhm TO-247-3L) is immediately available for production quantities. Please contact your local sales representative for pricing.