Xperi and Tower Semiconductor Announce New License for 3D Stacked Image Sensor Technology

Nachrichtenquelle: Business Wire (engl.)
10.06.2020, 13:00  |  149   |   |   

Xperi Holding Corporation (NASDAQ: XPER) (“Xperi”) and Tower Semiconductor (NASDAQ/TASE: TSEM) (“Tower”), a global leader in high-value analog semiconductor foundry solutions, today announced Tower’s license of Invensas ZiBond and DBI 3D semiconductor interconnect technologies. This technology complements Tower’s manufacturing of its state of the art stacked wafer BSI sensor platforms for time of flight (ToF), industrial global shutter and other CMOS image sensors on 300mm and 200mm wafers. In addition, Tower Semiconductor will explore the use of Invensas enabling 3D integration technologies for a broader range of applications, including memories and MEMS devices.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20200610005258/en/

“With our fast portfolio expansion, Xperi’s leadership in direct and hybrid bonding technologies enables us to support the rapidly evolving requirements of our customer base as they develop next-generation applications,” said Dr. Avi Strum, Senior Vice President and General Manager of the Sensors Business Unit, Tower Semiconductor. “3D stacking architectures and integration are core to our strategy of providing the highest value, proven analog semiconductor solutions, including event-driven and time of flight sensors for mobile, automotive, industrial and high-end photography applications.”

With the recently released full design kit for hybrid bonding, Tower’s customers can now design their products on two different wafers, an imager wafer and a mixed-signal CMOS wafer, that are then stacked together with electrical connections on a pixel level, from 10um pitch for applications such as Direct ToF (dToF) and event-driven sensors, down to 2.5um and even below for applications such as mobile ToF for face recognition applications. This separation into two wafers allows very high speed circuitry on the CMOS side, with very high sensitivity pixels, due to backside illumination, and extremely low dark current, below 1 electron/sec per square micron at 60 degrees Celsius, on the imager side. Tower’s unique platform also allows the use of different Epi thicknesses for near infrared sensitivity enhancement.

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