Navitas to Showcase Breakthrough GaN and SiC Based Solutions for AI Data Center, Energy and Grid Infrastructure, and Industrial Electrification at PCIM 2026

Highlights include two SST solutions for converting the MV grid to 800V HV DC, a 10 kW, 800 V-to-50 V DC-DC full-brick platform, along with a 20 kW 800 V-to-6 V power delivery board for AI data center

TORRANCE, Calif., May 18, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, will showcase its latest GaN and SiC products for AI data center, energy and grid infrastructure, and industrial electrification at PCIM 2026.

Product highlights include the latest in Navitas GaNFast FETs starting from 0.8 mOhms at 100 V to 11 mOhms at 650 V, along with expanded offerings across the GaNSafe^TM, GaNSlim^TM, and Bi-directional GaN IC product families.

Navitas will showcase 3300 V, 2300 V, and 1200 V Trench Assisted Planar (TAP) SiC devices using advanced reliability SiCPAK^TM press-fit modules, alongside recently announced 5th-generation GeneSiC TAP MOSFETs for AI-Data Center in QDPAK and TO247-LP.

For the AI data center, Navitas will exhibit two solutions that enable a swifter transition to the 800 V_DC standard using GaN:

• 20 kW 800 V-to-6 V power delivery board aiming 97.5% peak efficiency, eliminating the traditional 48V intermediate bus converter (IBC) stage while enhancing overall system efficiency, reliability, cost-effectiveness, and power density.
  
  
• 10 kW 800 V-to-50 V DC-DC platform featuring 2.1 kW/in³ power density and 98.5% peak efficiency, leveraging the latest 650 V and 100 V GaNFast FETs to deliver industry-leading efficiency, power density, and performance for 800 VDC and ±400 V power architectures.
  

For grid and energy infrastructure, Navitas will showcase two SST topologies enabled by Navitas GeneSiC UHV and HV technology:

• An EPFL-developed full SST cell integrating the primary converter stage, transformer, and secondary conversion stage using a novel single-stage topology, leveraging Navitas 3300 V and 1200 V SiC technology.
  
• 50KVA Bi-Directional Active Front End, DAB SST solution based on Navitas 3300 V SiCPAK MOSFET modules, using Texas Instruments’ C2000TM real-time microcontrollers and UCC218915-Q1 gate drivers.
  

Navitas will also showcase industrial electrification and motor control inverter solutions based on GaNSense Motor Drive ICs, integrating lossless current sensing, voltage sensing, and temperature protection for improved performance and robustness. In addition, GaNSlim power ICs will showcase simplified development of high-efficiency, high-power-density solutions with industry-leading integration for performance computing applications.

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