Transphorm at APEC 2024

SuperGaN Innovation for Low to High Power Applications

Silver Partner Transphorm, Inc. (Nasdaq: TGAN)—a global leader in robust GaN power semiconductors—announced today that its APEC 2024 showcase will underscore the company’s continued leadership in broad spectrum (low to high power) GaN power conversion. This leadership role positions Transphorm as one of the only GaN semiconductor companies making GaN’s performance advantages accessible to higher power system manufacturers. Attendees can visit Transphorm at Booth 1813 during the event on February 25 – 29.

This year, Transphorm will highlight major innovation milestones to include the industry’s first 1200 V GaN-on-Sapphire device model and leading short circuit robustness. The company’s versatile SuperGaN device portfolio will also be emphasized—to include recently announced packages such as the TO-247-4L, TOLL, and TOLT that round out a complete, flexible packaging selection for higher power systems requiring different heatsinking configurations. Lastly, on-site demonstrations will showcase the company’s technology in a wide variety of groundbreaking power systems from high performance uninterrupted and bi-directional power supplies to disruptive solar energy microinverters as well as 2- and 3-wheeled electric vehicle systems.

Transphorm’s ability to empower customers with superior GaN solutions that outperform competitive options (i.e. e-mode GaN, SiC, silicon) stems from the future-proofed SuperGaN platform, which embraces and amplifies fundamental physics. Transphorm manufactures a normally-off d-mode GaN technology in cascode. This design configuration allows inherent platform phenomena to perform to their greatest potential. These phenomena include the 2DEG GaN HEMT Channel and the SiO2/Si gate interface (created by the low-voltage MOSFET paired with Transphorm’s GaN HEMT). The company’s recently released white paper outlining these advantages can be downloaded here: https://bit.ly/dmodeadvwp.

One Core Platform, Crossing the Power Spectrum

Transphorm is the leading GaN power semiconductor company differentiated by its technology’s:

Manufacturability: Vertically integrated owning the EPI design, wafer process, and FET die design.

Designability: Offering well-known, industry standard packages and performance packages while partnering with renowned global leaders in firmware (Microchip Technology) and hardware integration (Weltrend Semiconductor) for easy design in.

Drivability: Offering devices that are driven like silicon and pair with off-the-shelf controllers and drivers while requiring minimal external circuitry.

Reliability: Still leading the industry with a current FIT rate of < 0.05 across more than 100 billion field hours of operation in low to high power applications.