DGAP-News

Intel and Micron Receive Most Innovative Flash Memory Technology Award at 2011 Flash Memory Summit

Micron Technology, Inc.

11.08.2011 09:00

---

Companies Recognized for Industry-Leading 20 Nanometer NAND Flash Memory
Process Technology

SANTA CLARA, Calif. and BOISE, Idaho, 2011-08-11 09:00 CEST (GLOBE NEWSWIRE) --
Intel Corporation (Nasdaq:INTC) and Micron Technology, Inc. (Nasdaq:MU),
received the Most Innovative Flash Memory Technology award Aug. 10 at the 2011
Flash Memory Summit for the companies´ industry-leading 20 nanometer (nm) NAND
Flash memory process technology.

The 20nm 8 gigabyte (GB) NAND device from Intel and Micron delivers the highest
capacity in the smallest form factor. Manufactured by IM Flash Technologies,
the NAND flash joint venture from Intel and Micron, the new device is a
breakthrough in NAND process and technology design, further extending the
companies´ lithography leadership.

Shrinking NAND lithography to this technology node is the most cost-effective
method for increasing NAND output to date, providing approximately 50 percent
more gigabyte capacity than current technology. The new 20nm process technology
also helps further the companies´ dual goal to enable instant, affordable
access to the world´s information.

´The growth in storage all the way from the data center to full-featured
smartphones and tablets is creating new demands for NAND flash technology,
especially greater capacity in smaller designs, ´ said Glen Hawk, vice president
of Micron´s NAND Solutions Group. ´Micron is proud of the industry-leading
technology we have developed with Intel, and we´re pleased to have this
technology honored by the Flash Memory Summit.´

´NAND silicon process and die level innovation is foundational for the flash
memory industry to provide compelling end solutions like solid-state drives, ´
said Tom Rampone, Intel vice president and general manager of the Intel
Non-Volatile Memory Solutions Group. ´We are pleased that the Flash Memory
Summit continues to recognize the innovation and success that Intel and Micron
are achieving together.´

Additionally, the new 20nm 8GB device measures just 118mm2 and enables a 30 to
40 percent reduction in board space (depending on package type) compared to
existing 25nm 8GB NAND devices. A reduction in the flash storage layout
provides greater system level efficiency as it enables tablet and smartphone
manufacturers to use the extra space for end-product improvements such as a
bigger battery, larger screen or adding another chip to handle new features.

Flash Memory Summit is the only conference dedicated entirely to flash memory