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    DGAP-News Intel and Micron Receive Most Innovative Flash Memory Technology Award at 2011 Flash Memory Summit

    Nachrichtenquelle: EQS Group AG
     |  11.08.2011, 09:00  |  177 Aufrufe  |   | 


    Micron Technology, Inc.

    11.08.2011 09:00



    Companies Recognized for Industry-Leading 20 Nanometer NAND Flash Memory
    Process Technology


    SANTA CLARA, Calif. and BOISE, Idaho, 2011-08-11 09:00 CEST (GLOBE NEWSWIRE) --
    Intel Corporation (Nasdaq:INTC) and Micron Technology, Inc. (Nasdaq:MU),
    received the Most Innovative Flash Memory Technology award Aug. 10 at the 2011
    Flash Memory Summit for the companies´ industry-leading 20 nanometer (nm) NAND
    Flash memory process technology.

    The 20nm 8 gigabyte (GB) NAND device from Intel and Micron delivers the highest
    capacity in the smallest form factor. Manufactured by IM Flash Technologies,
    the NAND flash joint venture from Intel and Micron, the new device is a
    breakthrough in NAND process and technology design, further extending the
    companies´ lithography leadership.

    Shrinking NAND lithography to this technology node is the most cost-effective
    method for increasing NAND output to date, providing approximately 50 percent
    more gigabyte capacity than current technology. The new 20nm process technology
    also helps further the companies´ dual goal to enable instant, affordable
    access to the world´s information.

    ´The growth in storage all the way from the data center to full-featured
    smartphones and tablets is creating new demands for NAND flash technology,
    especially greater capacity in smaller designs, ´ said Glen Hawk, vice president
    of Micron´s NAND Solutions Group. ´Micron is proud of the industry-leading
    technology we have developed with Intel, and we´re pleased to have this
    technology honored by the Flash Memory Summit.´

    ´NAND silicon process and die level innovation is foundational for the flash
    memory industry to provide compelling end solutions like solid-state drives, ´
    said Tom Rampone, Intel vice president and general manager of the Intel
    Non-Volatile Memory Solutions Group. ´We are pleased that the Flash Memory
    Summit continues to recognize the innovation and success that Intel and Micron
    are achieving together.´

    Additionally, the new 20nm 8GB device measures just 118mm2 and enables a 30 to
    40 percent reduction in board space (depending on package type) compared to
    existing 25nm 8GB NAND devices. A reduction in the flash storage layout
    provides greater system level efficiency as it enables tablet and smartphone
    manufacturers to use the extra space for end-product improvements such as a
    bigger battery, larger screen or adding another chip to handle new features.

    Flash Memory Summit is the only conference dedicated entirely to flash memory
    and its applications. It is intended for system designers, analysts, hardware
    and software engineers, product marketing and marketing communications
    specialists, and engineering and marketing managers. It features forums,
    half-day tutorials, paper and panel sessions, and expert tables. Subjects
    include harsh environments, laptops, enterprise storage system applications,
    consumer products, performance, product design, caching methods, design
    methods, software, new technologies, market research, testing and reliability,
    and security. The Summit also includes exhibits of the latest products and
    product awards. For more information, visit www.flashmemorysummit.com.

    Intel (Nasdaq:INTC) is a world leader in computing innovation. The company
    designs and builds the essential technologies that serve as the foundation for
    the world´s computing devices. Additional information about Intel is available
    at newsroom.intel.com and blogs.intel.com.

    Micron Technology, Inc., is one of the world´s leading providers of advanced
    semiconductor solutions. Through its worldwide operations, Micron manufactures
    and markets a full range of DRAM, NAND and NOR flash memory, as well as other
    innovative memory technologies, packaging solutions and semiconductor systems
    for use in leading-edge computing, consumer, networking, embedded and mobile
    products. Micron´s common stock is traded on the NASDAQ under the MU symbol. To
    learn more about Micron Technology, Inc., visit www.micron.com.

    The Micron Technology, Inc. logo is available at
    http://www.globenewswire.com/newsroom/prs/?pkgid=6950

    (c)2011 Micron Technology, Inc., and Intel Corporation. All rights reserved.
    Information is subject to change without notice.

    Micron and the Micron logo are trademarks of Micron Technology, Inc. Intel is a
    trademark of Intel Corporation or its subsidiaries in the United States and
    other countries. All other trademarks are the property of their respective
    owners.

             CONTACT: Deb Paquin
             Intel NVM Solutions Group
             916-984-1921
             debpaquin@strategiccom.biz
             
             Daniel Francisco
             Micron Technology, Inc.
             208-368-5584
             dfrancisco@micron.com
    News Source: NASDAQ OMX

    11.08.2011 Dissemination of a Corporate News, transmitted by DGAP -
    a company of EquityStory AG.
    The issuer is solely responsible for the content of this announcement.

    DGAP´s Distribution Services include Regulatory Announcements,
    Financial/Corporate News and Press Releases.
    Media archive at www.dgap-medientreff.de and www.dgap.de




    Language:     English
    Company:      Micron Technology, Inc.
                  
                   
                  United States
    Phone:        
    Fax:          
    E-mail:       
    Internet:     
    ISIN:         US5951121038
    WKN:          

    End of Announcement                             DGAP News-Service





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