STMicroelectronics 28nm FD-SOI Technology Hits 3GHz Operating Speed - Seite 2

"As we had anticipated, FD-SOI is proving to be fast, simple and cool; we had fully expected to see 3GHz operating speeds, the design approach is very consistent with what we had been doing in bulk CMOS, and, with the benefits of fully depleted channels and back biasing, the low-power requirements are also meeting our expectations," said Jean-Marc Chery, Executive Vice President, General Manager Digital Sector, and Chief Technology and Manufacturing Officer of STMicroelectronics.

Reinforcing the point of simplicity, ST has found porting Libraries and Physical IPs from 28nm Bulk CMOS to 28nm FD-SOI to be straightforward, and the process of designing digital SoCs with conventional CAD tools and methods in FD-SOI to be identical to Bulk, due to the absence of MOS-history-effect. FD-SOI enables production of highly energy-efficient devices, with the dynamic body-bias allowing instant switch to high-performance mode when needed and return to a very-low-leakage state for the rest of the time - all in a totally transparent fashion for the Application Software, Operating System, and the Cache Systems. Finally, FD-SOI can operate at significant performance at low voltage with superior energy efficiency versus Bulk CMOS.

ST will be demonstrating the FD-SOI technology at its booth (Hall 7 E110) at Mobile World Congress in Barcelona, Feb 25-28.

 

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ST is a global leader in the semiconductor market serving customers across the spectrum of sense and power technologies and multimedia convergence applications. From energy management and savings to trust and data security, from healthcare and wellness to smart consumer devices, in the home, car and office, at work and at play, ST is found everywhere microelectronics make a positive and innovative contribution to people's life. By getting more from technology to get more from life, ST stands for life.augmented.

In 2012, the Company's net revenues were $8.49 billion. Further information on ST can be found at www.st.com.

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[1] FD-SOI transistors have a drawn channel length of 28nm and a pitch (transistor to transistor) of 113nm, allowing almost 450 transistors to fit across a 50,000nm-diameter human hair.

ST 28nm FD-SOI Technology Hits 3GHz_FINAL

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