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RF Micro Devices produces its first III-V solar cell: low cost volume cell expected in 2012
15 March 2010 | By Mark Osborne | News > Cell Processing

Compound semiconductor manufacturer, RF Micro Devices (RFMD) has claimed its first milestone towards entering volume production of III-V-based multi-junction PV cells on six-inch gallium arsenide (GaAs) wafers with the successful fabrication of solar cells using its standard semiconductor fab equipment.

Last year, RFMD started to collaborate with the U.S.Department of Energy's National Renewable Energy Laboratory (NREL) to develop a commercially viable and high volume-capable compound semiconductor-based process for high-performance multi-junction PV cells based on NREL’s cell design IP. RFMD plans production to begin in 2012, making it a low-cost leader for the CPV-based cells and potentially opens up the CPV market to better compete on cost per watt levels with conventional c-Si and thin film technologies.

"NREL's collaboration with RFMD demonstrates our commitment to developing the best technologies for renewable energy and aligning with the most capable partners to
commercialize and deploy each technology,” commented NREL Director Dan Arvizu “We applaud RFMD's successful achievement of this first technical performance milestone."

RFMD is expected to take move from the ‘foundation phase’ of the project to a ‘technology demonstration phase,’ which will use NREL's IP and technology, which in the lab has demonstrated the highest reported solar cell conversion efficiencies, at 40.8%.

Six-inch wafer production is the largest size used for III-V semiconductor fabrication in volume applications. Currently, compound based solar cells are fabricated on smaller wafer sizes and low productivity tool sets.

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RFMD(R) Ranks No. 1 in Global Ranking of Mobile Phone Power Amplifiers and Front End Modules

GREENSBORO, N.C., Apr 6, 2010 (GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today that Gartner Dataquest has recognized RFMD as the worldwide leading supplier of mobile phone power amplifiers and front end modules, based on revenue, and the worldwide leading supplier of mobile phone RF devices, based on revenue, for 2009.

According to the March 29, 2010 report, "Market Share Analysis: Mobile Phone Application-Specific Semiconductors, Worldwide, 2009," RFMD maintained its number one position in both categories. Also in the report, Gartner Dataquest identified RFMD as the world's 8th largest supplier of overall mobile phone application-specific semiconductors in 2009, based on revenue. RFMD's 2009 revenue in the category increased to $712 million, according to Gartner Dataquest, highlighting RFMD as one of only four companies in Gartner Dataquest's report to achieve year-over-year growth in this category.

Eric Creviston, President of RFMD's Cellular Products Group (CPG), said, "We believe Gartner Dataquest's independent research findings highlight RFMD's product leadership and the continued success of our customer diversification efforts. We are committed to expanding our leadership position in cellular RF components by delivering breakthrough products and leveraging our relationships with the world's top-tier mobile device manufacturers and cellular platform providers."

RFMD is capitalizing on major global secular growth trends and continues to enjoy strength in CPG, supported by strong 2010 handset unit volumes, expanded participation across customer and channel partner programs and increasing adoption of connected devices, including smart phones and 3G devices. Additionally, RFMD's Multi-Market Products Group (MPG) is seeing a broad-based recovery across its diversified end-markets, led by applications in SmartEnergy AMI, Defense and Power, Point-to-Point Backhaul, WiMAX/WiFi CPE, Electronic Toll Collection in China, and Catalog/Standard products.

[Moneybilder]

Keiner da?

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doch ich;

GREENSBORO, N.C., March 3, 2011 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced it has successfully achieved another significant performance milestone related to the commercialization of high-performance photovoltaic (PV) cells.

Specifically, RFMD has fabricated dual-junction PV cells that integrate gallium arsenide (GaAs) and indium gallium phosphide (InGaP) PV junctions using the Company's standard six-inch semiconductor equipment. The successful fabrication of the dual-junction PV cells clears the way for RFMD to develop triple-junction structures, with the ultimate goal of developing a commercially viable and high volume-capable compound semiconductor-based process for high-performance PV cells.

Bob Bruggeworth, president and CEO of RFMD, said, "RFMD is very pleased with the world-class performance of our dual-junction cells. With this achievement, RFMD is demonstrating we possess the critical technologies to produce a low-cost PV product with competitive solar cell conversion efficiency, supported by the quality, reliability, and volumes that characterize the cellular handset market."

In 2009, RFMD announced it had entered into a cooperative agreement with the U.S. Department of Energy's National Renewable Energy Laboratory (NREL) for the purpose of developing a production capable process technology for high-performance PV cells. NREL has decades of research experience and expertise in PV cell technology, and RFMD is a pioneer and industry leader in compound semiconductor manufacturing with a proven ability to commercialize new technologies.

The dual-junction achievement and associated performance characteristics are consistent with results achieved by NREL in their development of Inverted Metamorphic Multi-Junction (IMM) technology. NREL's technology has demonstrated one of the world's highest reported solar cell conversion efficiencies, at 40.8 percent, and continued substantial improvements in efficiency are anticipated.

RFMD's dual-junction achievement was realized using the Company's existing manufacturing capabilities and robust supply chain, which are optimized for high volume, low cost, reliability and performance. The conversion efficiency achieved across RFMD's six-inch wafers was exceptionally uniform, enabling high device yields and tight distributions in CPV product performance.

RFMD's development efforts related to a compound semiconductor-based process for PV cells are broadly applicable across technologies, including IMM as well as conventional triple-junction Germanium-based CPV devices. RFMD anticipates multiple opportunities related to PV cells and is engaged with CPV system integrators and solar cell module manufacturers.

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Kurs heute deutlich unter dem von vor 2 Jahren...

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Apple und Samsung Geraete? Bzw
nun auch ins Nokia Lumina
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am 22.01.13 gibts ja Ergebnisse - richtig ?

http://www.fool.com/investing/general/2013/01/17/will-these-…

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22.01.2013
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dehistorize

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gemergt mit Triquint zu Qorvo

hier geht's weiter Thread: Qorvo - fusioniert aus Triquint und RFMD