Magnachip Boosts Its Extensive Automotive Product Lineup With the Release of a New 40V MXT MV MOSFET

Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the release of its new 40V MXT MV MOSFET¹. With this latest addition, the Company now offers 13 MOSFET and IGBT products for a wide range of automotive applications (see the tables below).

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As the automotive industry adopts advanced technologies such as autonomous driving and enhanced infotainment systems, the demand for high-efficiency power solutions increases. According to Omdia, a global market research firm, the automotive power discrete market is projected to grow 14% annually from 2024 to 2027.

Magnachip entered the automotive sector in April 2022 with its first 40V MOSFET and has since broadened its product offerings by releasing 30V, -40V (P-channel MOSFET²), 60V, and 250V MOSFETs for vehicles. In September 2023, the Company introduced 650V and 1200V IGBTs for positive temperature coefficient heaters and e-compressors for automotive. In the last two years, Magnachip's power products have been integrated into vehicles of major automotive manufacturers in the United States, Korea, Japan and China.

Leveraging its technological capabilities, Magnachip now unveils this 40V MXT MV MOSFET (AMDD040N055RH) in the Decawatt Package (DPAK). The new MOSFET offers exceptional versatility for various automotive applications, such as motor control systems or power seat modules and electric stability control systems for reverse battery protection.

“Magnachip is committed to supplying premium products that meet the evolving demands of the automotive sector,” said YJ Kim, CEO of Magnachip. “Our technical innovation, coupled with a steady supply and a comprehensive range of product offerings, will strengthen our foothold in the automotive industry and broaden our global market presence.”

Magnachip’s automotive MOSFET product family
Product	VDS [V]	VGS(th), typ. [V]	*RDS(ON) [mΩ] @ VGS=10V		Qg, Typ [nC] @ 10V	Package	AEC-Q101
			Max.	Typ.
AMDV030N150URH	30	1.9	15.0	11.0	8.3	PDFN33	Qualified
AMDU040N014VRH	40	3.1	1.4	1.1	71.0	PDFN56	Qualified
AMDW040N014VF	40	3.1	1.4	1.1	71.0	Sawn on Foil	Qualified
AMDW1723F	40	3.0	2.0	1.6	88.3	Sawn on Foil	Qualified
AMDU040N043VRH	40	3.2	4.3	3.5	23.0	PDFN56	Qualified
AMDD040N055RH	40	3.2	5.5	4.3	24.0	DPAK	Qualified
AMDUA040N070RH	40	3.2	7.0	6.1	24.0	PDFN56 Dual	Qualified
AMDD040P069RH	-40	-1.8	6.9	6.2	91.0	DPAK	Qualified
AMDW06N021F	60	2.3	2.8	2.1	243.0	Sawn on Foil	Qualified
AMDD14N25CRH	250	3.0	280.0	220.0	20.0	DPAK	Qualified

*R_{DS(on)_max}: the maximum resistance of MOSFETs during on-state operation

Magnachip’s automotive IGBT product family
Product	VCES	IC	IC, max.	Package	Option	AEC-Q101
AMBQ40T65PHRTH	650V	40A	60A	TO247	Diode co-pak	Qualified
AMBQ40T120RFRTH	1200V	40A	60A	TO247	Diode co-pak	Qualified
AMBQ40T120RRTH	1200V	40A	60A	TO247	None (Diode)	Qualified

Related Links

Please find further details and datasheet about Magnachip’s Automotive Solutions at https://www.magnachip.com/automotive-solutions.

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About Magnachip Semiconductor

Magnachip is a designer and manufacturer of analog and mixed-signal semiconductor platform solutions for communication, Internet of Things (“IoT”), consumer, computing, industrial and automotive applications. The Company provides a broad range of standard products to customers worldwide. Magnachip, with more than 40 years of operating history, owns a portfolio of approximately 1,100 registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise. For more information, please visit www.magnachip.com. Information on or accessible through Magnachip’s website is not a part of, and is not incorporated into, this release.

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¹ MXT MV MOSFET (Magnachip eXtreme Trench Medium Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 40~200V trench MOSFETs

² P-channel MOSFET: A P-channel MOSFET requires the gate voltage to be lower than the source to turn on, in contrast to an N-channel MOSFET. Therefore, the drain-source voltage is generally expressed as a negative value (ex. -40V).

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