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Cadence Announces Broad Next-Generation Memory Standard Support in Samsung Foundry’s Advanced Process Technologies

Nachrichtenquelle: Business Wire (engl.)
15.05.2019, 00:15  |  621   |   |   

Cadence Design Systems, Inc. (NASDAQ: CDNS) today announced broad support for memory technologies across a range of Samsung Foundry's advanced process technologies targeting high-bandwidth applications. As a result of the longstanding collaboration with Samsung Foundry, Cadence has taped out DDR5/4 PHY IP on the Samsung 7nm Low Power Plus (7LPP) process, GDDR6 PHY IP on the Samsung 14nm Low Power Plus (14LPP) process and 2.4G High-Bandwidth Memory 2 (HBM2) PHY IP on the Samsung 10nm Low Power Plus (10LPP) process, which has been recharacterized as the 8nm Low Power Plus (8LPP) process. In addition, Cadence PHY IP for GDDR6 has achieved silicon success on the Samsung 7LPP process. Mutual customers can begin creating designs using Samsung Foundry’s advanced process technologies with the confidence that the Cadence DRAM interface IP is ready for use.

For more information on the Cadence IP for GDDR6 PHY and DDR5/4, please visit www.cadence.com/go/samsungddrip. For more information on the Cadence IP for HBM2 PHY, visit www.cadence.com/go/samsunghbm2ip.

The Cadence IP that supports Samsung Foundry’s various advanced nodes is intended for several emerging application areas including high-performance computing (HPC), mobile, artificial intelligence (AI), IoT, graphics, automated driving (AD) and adaptive driver assistance systems (ADAS). Customers benefit from having access to a complete, single-vendor solution for controller, PHY and Verification IP (VIP) that speeds chip integration time and reduces interoperability risk. Other key competitive advantages include:

  • Cadence design techniques reuse technology from Cadence’s silicon-proven DDR and SerDes designs, resulting in lower risk when implementing advanced memory technologies
  • Cadence’s low bit-error rate (BER) for GDDR6 IP reduces retries on the memory bus, giving applications greater bandwidth and lower maximum latency
  • Cadence’s design margin allows users to implement GDDR6 on PCBs using normal fiberglass FR4 materials, reducing the cost of GDDR6 deployment
  • Cadence’s reference design for memory interfaces allows users to replicate Cadence’s test chip results in their own products
  • Cadence DRAM controllers are based on the industry-leading Denali DDR controller, which includes a full set of features for popular memory interfaces

“Cadence’s silicon success and tapeouts in Samsung Foundry’s 7LPP, 8LPP, 10LPP and 14LPP processes technologies are significant milestones in our successful collaboration, enabling the delivery of high-performance DDR5/4 PHY, GDDR6 PHY and HBM2 IP solutions to our mutual customers,” said Jaehong Park, executive vice president of Design Platform Development at Samsung Electronics. “Customers designing at advanced nodes now have a range of Cadence’s DRAM interface IP from which to choose, as part of the broad enablement of DRAM interfaces in Samsung Foundry processes.”

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