Transphorm at APEC 2024

SuperGaN Innovation for Low to High Power Applications - Seite 2

Transphorm today supports the largest range of power conversion requirements (45 W to 10+ kW) across the widest range of power applications. The company’s FET portfolio includes 650 V and 900 V devices with 1200 V device(s) in development. These devices are JEDEC and AEC-Q101 qualified, making them optimal solutions for power adapters and computer PSUs through to broad industrial UPSs and electric vehicle mobility systems. The mix of customer products to be displayed at APEC underscore the broad usability of Transphorm’s SuperGaN platform.

Speaking Engagements

Transphorm experts will educate audiences on site via the following presentations:

High Power GaN Devices and Applications
Professional Education Seminar (S17): February 26 at 8:30 a.m.
Speakers: Davide Bisi, Member of Technical Staff, Office of the CTO; Philip Zuk, SVP Business Development and Marketing; Tushar Dhayagude, VP of Worldwide Sales and FAE

The SuperGaN Difference: Advantages of Normally-Off d-Mode GaN Power Semiconductors
Exhibitor Seminar: February 27 at 2:15 p.m.
Speaker: Jenny Cortez, Technical Sales Manager

GaN Four Quadrant Switch Technology for Microinverters and Motor-Drives
Industry Session (IS16.2): February 28 at 1:55 p.m.
Speaker: Geetak Gupta, Member of Technical Staff, Office of the CTO

15-mΩ GaN Device with 5-μs Short-Circuit Withstand Time
Industry Session (IS22.6): February 29 at 10:55 a.m.
Speaker: Davide Bisi, PhD, Member of Technical Staff, Office of the CTO

Meet With Us

To schedule a meeting with Transphorm during the show, please contact [e-mail].

About Transphorm

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over 99% efficiency, 50% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat at Transphorm_GaN.

The SuperGaN mark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.

View source version on businesswire.com: https://www.businesswire.com/news/home/20240206699898/en/

The Transphorm Stock at the time of publication of the news with a raise of +0,41 % to 4,86USD on Nasdaq stock exchange (06. Februar 2024, 02:00 Uhr).