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     145  0 Kommentare Soitec and Tokai Carbon enter into a strategic partnership to develop polycrystalline silicon carbide substrates for Soitec SmartSiCTM wafers

    Soitec and Tokai Carbon enter into a strategic partnership to develop polycrystalline silicon carbide substrates
    for Soitec SmartSiCTM wafers

    • Under this partnership, Tokai Carbon will supply 150mm and 200mm poly-SiC substrates specifically designed for Soitec SmartSiCTM wafers.
    • Tokai Carbon’s technology and manufacturing capacity is set to make a strategic contribution to the global ramp-up of SmartSiCTM wafer production benefiting also from the right to use Soitec’s polySiC product specification for manufacturing polySiC coarse wafers compliant with Soitec SmartSiCTM Wafers technology
    • SmartSiCTM engineered substrates accelerate the adoption of silicon carbide for electric mobility, industrial and smart grid applications.

    Bernin (France) and Tokyo (Japan), 22 May 2024 - Soitec (Euronext Paris), a world leader in the design and manufacture of innovative semiconductor materials, and Tokai Carbon (TSE, Tokyo), a comprehensive manufacturer of carbon and graphite products, have entered into a strategic partnership for the development and supply of polycrystalline silicon carbide substrates specifically designed for Soitec SmartSiCTM wafers.
            
    Silicon carbide is a disruptive compound semiconductor and SmartSiCTM engineered substrates accelerate the adoption of silicon carbide for electric mobility, industrial and smart grid applications by delivering superior manufacturing and cost efficiencies with an improved environmental footprint.

    Under this partnership, which will see Tokai Carbon supply 150mm and 200mm poly-SiC wafers to Soitec, the two companies are harnessing their advanced R&D capabilities to enhance the SmartSiCTM ecosystem. Tokai Carbon’s advanced technology and manufacturing capacity in polycrystalline silicon carbide (polySiC) combined with the right to use Soitec specifications for polySiC coarse wafers compliant with Soitec SmartSiCTM is expected to make a strategic contribution to the global ramp-up of SmartSiCTM wafer production.

    Cyril Menon, Chief Operations Officer of Soitec, stated: “This partnership with Tokai marks yet another key step in the ramp-up of Soitec’s SmartSiC technology to address fast-growing markets such as electric mobility and industrial electrification. Tokai’s top quality SiC products and R&D capabilities, combined with Soitec’s innovative SmartSiC technology, can help to accelerate global adoption of electric mobility and other SiC technologies. This is an important milestone in terms of perception and value creation for the SmartSiC ecosystem.

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    Soitec and Tokai Carbon enter into a strategic partnership to develop polycrystalline silicon carbide substrates for Soitec SmartSiCTM wafers Soitec and Tokai Carbon enter into a strategic partnership to develop polycrystalline silicon carbide substrates for Soitec SmartSiCTM wafers Under this partnership, Tokai Carbon will supply 150mm and 200mm poly-SiC substrates specifically designed …

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