Navitas Drives High-power, High-reliability, Next-gen Power Semis for AI, EV, Industrial, Solar, and Energy Storage at PCIM 2024

Leading international exhibition highlights the latest gallium nitride (GaN) and silicon carbide (SiC) technologies for the safest, most efficient, most reliable power for fast charging, power conversion and storage, motor drive, and more.

TORRANCE, Calif., May 21, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, invites visitors to experience “Planet Navitas” at PCIM 2024 (June 11^th-13^th) and see how industry-leading GaN and SiC solutions deliver optimal performance in a broad array of fast-growing markets and applications from 20 W to 20 MW.

Now in its 25^th year, Nuremberg, Germany’s “Power, Control and Intelligent Motion” (PCIM) serves as the premier international meeting place for industry specialists and is renowned as the leading exhibition for power electronics and its applications.

Aligned with Navitas’ mission to “Electrify Our World”, the “Planet Navitas” booth invites visitors to discover how next-gen GaN and SiC technology enable the latest solutions for fully-electrified EV transportation, AI data centers, industrial compressors, drives, and robotics plus renewable energy sourcing and storage. Each example highlights end-user benefits such as increased portability, longer range, faster charging, and grid independence, along with a focus on how low-carbon-footprint GaN and SiC technology can save over 6 Gtons/yr CO₂ by 2050.

“PCIM is a key event in the power-electronics calendar,” says Alessandro Squeri, Navitas’ senior director for European sales. “Complementary GaNFast and GeneSiC portfolios, with comprehensive, application-specific system design support, accelerate customer time-to-market with sustainable performance advantages. ‘Planet Navitas’ represents the very real, inspiring implementation of GaN & SiC that makes up a $1.6B identified customer pipeline as part of a vast $22B/year market opportunity.”

Major technology updates and releases include GaNSafe – the world’s most-protected, most reliable, and highest-performance GaN power, Gen-4 GaNSense Half-Bridge ICs – the most integrated GaN devices, and Gen-3 Fast GeneSiC power FETs – for game-changing motor drive and energy-storage applications.

In addition to the exhibition, PCIM 2024 includes peer-review technical presentations, including:

11^th June, 13:00 - 14:30, Hall 10.1

• “Low-Cost High-Density 300 W / 20 V AC-DC Converter Enabled by GaN Power ICs”- Tom Ribarich, Sr. Director of Strategic Marketing, Navitas Semiconductor
  • A low-cost 300 W high-density AC-to-DC converter has been designed and demonstrated to achieve >96% peak efficiency and 270 cc. The circuit topologies include a 2-phase interleaved PFC input stage, an LLC DC-DC stage, and a synchronous rectification output stage. The design includes GaN Power ICs and off-the-shelf controllers running at 300 kHz. This new design has resulted in a cased power density of 1.1 W/cc.

12^th June, 15:30 - 17:00, Foyer