Alpha and Omega Semiconductor Releases αMOS5 600V FRD 95mohm and 125mohm Super Junction MOSFET

Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap power devices, power management ICs, and modules, today announced the release of two αMOS5 600V FRD Super Junction MOSFETs. αMOS5 is AOS’s market and application-proven high voltage MOSFET platform, designed to meet the high efficiency and high-density needs of servers, workstations, telecom rectifiers, solar Inverters, EV charging, motor drives and industrial power applications.

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New advanced HV MOSFETs optimized to meet the high efficiency needs in LLC, PSFB Converters and H-4 and Cyclo-Inverters of Solar/ESS applications (Graphic: Business Wire)

The design of today’s mid-high power switched-mode power supply (SMPS) and solar inverter systems boil down to four major challenges – higher efficiency, higher density, lower system costs, and uncompromised robustness. High Voltage Super Junction MOSFETs are the dominant choice for topologies such as single/interleaved/dual boost/CrCM TP PFCs, LLC, PSFB, multi-level NPC/ANPC and so forth.

αMOS5 has been the leading High Voltage Super Junction solution tailored for fast switching, ease-of-use and robustness in mission-critical applications. αMOS5 FRD FETs are engineered with strong intrinsic body diode to handle hard commutation scenarios, when the freewheeling body diode is in reverse recovery due to abnormal operations, such as short-circuit or start-up transients. The two products released, the AOK095A60FD (TO-247) and AOTF125A60FDL (TO-220F), are 600V FRD FETs with 95mohm and 125mohm maximum Rdson, respectively. In tests conducted by AOS engineers, the body diodes of these two FRD FETs have survived high di/dt, under abnormal system conditions, even at elevated junction temperatures of up to 150°C. Additionally, AOS tests have shown that these devices’ turn off energy (Eoff) are noticeably lower than the competition’s, which contributes to higher efficiency in light or mid-load conditions.