NVE Heute ist Kauftag !!! - 500 Beiträge pro Seite

[MultiCash]

Verdammte Hacke,
wer heute bei rund 30 Dollar nicht einsteigt,
dem kann ich auch nicht mehr helfen,
sorry Jungs

[tockey1]

Bei http://www.Nano-Invests.de

Die 4Investors-Studie:
http://www.4investors.de/Partner/nano/4investorsnano.html

[Kostolanys Erbe]

hi multicash,

jetzt ist wirklich bald kauftag!!!!

1,1 mio aktien geshortet = fast 25% der ausgegebenen aktien!!!!!!!

wenn die börse nur mal nach oben gehen würde....aber anscheinend wird weiter draufgehauen... und unter 30 dollar kann es schnell richtung 25 bis 20 dollar gehen.

charttechnisch ist nvec überkauft, was für einen rebound über 30 dollar (wichtige marke) helfen könnte.


NVEC
NVE Corporation Nasdaq-SCM




Settlement
Date Short
Interest Avg Daily
Share Volume Days
to Cover
Apr. 15, 2004 1,196,112 1,441,794 1.00
Mar. 15, 2004 1,003,833 661,199 1.52
Feb. 13, 2004 786,183 893,417 1.00
Jan. 15, 2004 317,097 559,392 1.00
Dec. 15, 2003 309,028 952,428 1.00
Nov. 14, 2003 341,252 655,030 1.00
Oct. 15, 2003 411,485 755,762 1.00
Sep. 15, 2003 303,343 863,879 1.00
Aug. 15, 2003 3,269 53,012 1.00
Jul. 15, 2003 2,559 33,099 1.00
Jun. 13, 2003 8,840 18,285 1.00
May 15, 2003 0 974


kosto

[MisssChina]

May 26, 2004
Honeywell challenges NVEC`s published "spin-off" claims.

An April 30, 2004 letter from Honeywell International, Inc.`s (NYSE: HON $33.60) Trademark Counsel clearly states "NVE Corporation is not a `spin-off` of Honeywell Inc. NVE Corporation was never owned by Honeywell Inc. nor created as a result of a corporate divestiture by Honeywell Inc." This Honeywell statement refutes and contradicts representations contained in NVE Corporation`s (NASDAQ: NVEC, $31.50) filings with the Securities & Exchange Commission ("SEC") and in articles and investor newsletters used in NVE`s promotion.

The earliest example of NVE`s use of the "Honeywell spin-off" representation seems to be in August 1990 in a publication called Corporate Minnesota Report. The article reported that NVE is a "Honeywell spin-off." NVE`s 2000 Proxy Statement filed with the Securities and Exchange Commission states that NVE was "formed in 1989 as a spin-off from Honeywell." The June 2003 the Forbes/Wolfe Nanotech Report called NVE "a spin-off from Honeywell." On September 12, 2003 Investors Business Daily wrote that NVE is a "Honeywell International Inc. spinoff."

Investors may have been led to believe that NVE uses the phrase "Honeywell spin-off" because NVE was created or at one time owned by Honeywell before it sold its shares to the public. Nothing could be farther from the truth. NVE was merged into the empty public shell of a defunct company. The transaction is commonly referred to by stock promoters as a "shell deal."

NVE`s "shell deal" gave insiders the ability to sell their shares to the public. NVE insiders then issued a series of investor representations, including the phrase "MRAM technology leader," claims of involvement with nanotechnology and the "Honeywell spin-off" phrase. These statements and promotional activities created sufficient volume for insiders to dump virtually all of their holdings onto the public.

On May 21, 2004 Jim Daughton sold 10,000 shares of NVE stock. Daughton has sold a total of 344,300 shares of his 430,500 shares since the NVE promotion began in June 2003.


Asensio & Company, Inc. reports are published and distributed solely and exclusively to registered asensio.com subscribers who have read and agreed to the Mandatory User Agreement located at http://www.asensio.com/TermsOfUse.asp. The Mandatory User Agreement is included herein in its entirety by reference thereto and by notice of its availability.



May 28, 2004
NVEC`s MRAM technology is no "holy grail" for Cypress.

On May 18, 2004 Cypress Semiconductor Corporation`s (NYSE: CY, $16.15) chief financial officer Manny Hernandez provided an update on its Magnetoresistive Random Access Memory ("MRAM") development at the Piper Jaffray Technology Conference in New York City. Mr. Hernandez stated that MRAM has been very hard to invent and develop. Mr. Hernandez stated that Cypress` MRAM chips continue to have "soft error rates that need to be rectified and I think we need a couple of quarters easily, if at all, to solve that problem."

Cypress licensed all of NVE Corporation`s (NASDAQ: NVEC, $30.75) MRAM technology on April 12, 2002. In its 2002 annual report Cypress called MRAM the "`holy grail` memory technology." Cypress is experienced in designing and manufacturing memory chips and has made a significant investment of time and money in its MRAM development program. Yet Cypress has not been able to produce an MRAM product using NVE`s so-called MRAM technology. It is important for investors to remember that Cypress will not pay NVE a licensing or any other fee even if they eventually make an economically viable MRAM product.

On April 2, 2004 Asensio & Company, Inc. issued two research reports titled, "NVEC fails to solve Cypress` MRAM problems" and "Cypress values NVEC at a maximum of $4.85 per share." The reports analyze Cypress` NVE stock purchases, stock sales and NVE`s licensing agreement with Cypress.

[Kostolanys Erbe]

hi

und weiterhin ist nvec in dem bann der shorties...über 1,6 mio....geshortet. bei diesem börsentrend kann man nur abwarten und nvec sich auf die watchlist setzen....geduld und warten...



kosto

[MultiCash]

Ich hoffe, du hast sie noch rechtzeitig von der Watchlist genommen und gekauft

[Madawa]

Hi,

da geht ja plötzlich was. Gibt es News, oder warum der steile Anstieg heute?

[tecdaexchen]

guckst Du hier...

http://www.finanznachrichten.de/goto.asp?id=3543730

[Madawa]

Alles klar, habs gefunden.

Aber mal ne andere Frage, profitiert NVE auch von den MRAM-Entwicklungen von Infineon und IBM (s. unten)? Habe nichts gefunden, dass die zu Lizenznehmern gehören.






Infineon und IBM präsentieren weltweit ersten 16-Mbit-MRAM
22.06.2004 (09:58)

Infineon und IBM präsentieren weltweit ersten 16-Mbit-MRAM - Innovatives Chipdesign ermöglicht derzeit höchste Speicherdichte

Gemeinsame Presseinformation von Infineon und IBM

Infineon Technologies AG und IBM präsentieren den weltweit ersten 16-Mbit-MRAM (Magnetoresistive Random Access Memory). Dieser neue nichtflüchtige MRAM-Speicherchip weist die derzeit höchste Speicherdichte für diese Technologie auf und zeigt, dass MRAM das Potenzial hat, ein universeller Speicher für leistungsfähige Computer und mobile Applikationen zu werden.

Die steigende Anzahl mobiler Applikationen wie Smart-Phones und Notebooks mit zusätzlichen Multimediafunktionen erfordert fortschrittlichere Speicherchips. MRAM ist ein vielversprechender Kandidat für einen Universalspeicher in hochleistungsfähigen und mobilen Computern, da er schneller ist und weniger Leistung verbraucht als bestehende Technologien.

„Mit der Demonstration des 16-Mbit-MRAMs unterstreichen wir wieder einmal unsere führende Position bei innovativen nichtflüchtigen Technologien“, sagte Dr. Wilhelm Beinvogl, Chief Technology Officer des Geschäftsbereichs Speicherprodukte bei Infineon Technologies. „Die heutige Ankündigung ist ein bedeutender Durchbruch in der Entwicklung dieser neuen Speichertechnologie.“

Die Zeit, die benötigt wird, um das erste Informations-Bit in den MRAM-Chip zu schreiben, ist etwa eine Million mal schneller als die Zeit, die bei einem Flash-Speicherchip erforderlich ist. Die Zeit, die notwendig ist, um das erste Bit aus dem MRAM auszulesen, ist etwa um den Faktor drei schneller als bei einem NOR-Flash-Chip und ungefähr 1.000-mal schneller als bei einem NAND-Flash-Chip. Zudem verbraucht der MRAM im Vergleich zur DRAM-Technologie weniger Strom.

„Fortschritte bei Hochleistungscomputern haben den Bedarf an innovativeren, leistungsfähigeren und vielseitigeren Speichertechnologien steigen lassen“, sagte Dr. T. C. Chen, Vice President Science and Technology, IBM Research. „IBM ist stets auf der Suche nach neuen Wegen, um die Performance von Servern zu verbessern und MRAM könnte sich hierfür als leistungsfähige Komponente erweisen.“

Die Produktdemonstration des 16-Mbit-MRAMs wurde auf Basis einer 0,18-µm-Logik-Prozesstechnologie realisiert. Sie verwendet 1-Transistor-1-Magnetic-Tunnel-Junction-(1T1MTJ)Zellen und verfügt über eine SRAM-ähnliche Schnittstelle. Diese ist in mobilen und tragbaren Anwendungen weit verbreitet und ideal geeignet für den Betrieb des MRAM-Cores. Der Chip arbeitet mit Zugriffs- und Zykluszeiten von 30 ns bis 40 ns. Im Vergleich zu den bisher angekündigten Multi-Mbit-MRAMs zeichnet sich der neue MRAM-Chip von Infineon durch die höchste Speicherkapazität (16 Mbit) und eine Zellengröße von nur 1,42 µm2 aus. Das einzigartige Multi-Mbit-MRAM-Design verwendet auch eine neue “bootstrapped“ Treiberschaltung zum Schreiben der Daten und mehrere Designmerkmale zur Reduzierung des Standby-Stroms.

Das innovative Chipdesign basiert auf einer 1T1MTJ-MRAM-Zelle mit drei Metalllagen: “Ground Mesh“, “Write Word Line“ (WWL) und “Bit Line“ (BL). Nur drei MRAM-spezifische Level (VA, MA, MTJ) sind über die CMOS-Basis-Technologie mit drei Kupferlagen hinaus erforderlich. Das niederohmige Ground-Mesh erlaubt große ununterbrochene Arrays. Der Chip besteht aus zwei 8-Mbit-Einheiten, die jeweils in 64 128-Kbit-Blöcke aufgeteilt sind. Jeder 128-Kbit-Block enthält ein einzelnes Array und damit verbundene Schaltungen.


Die MRAM-Technologie


MRAM ist eine Speichertechnologie, die die Magnetisierung und nicht die elektrische Ladungen zur Speicherung der Datenbits verwendet und deshalb portable Computerprodukte erheblich verbessert. Die innovative MRAM-Speichertechnologie kombiniert die besten Leistungsmerkmale der heute gebräuchlichen Speicher: Die hohe Anzahl von Schreibzyklen von dynamischen RAMs (DRAM), die hohe Geschwindigkeit von statischen RAMs (SRAM) und die Nichtflüchtigkeit von Flash-Speichern. Da MRAMs die Informationen auch nach dem Ausschalten der Stromversorgung erhalten, sind Produkte wie Personal-Computer oder Notebooks, die diese verwenden, sofort nach dem Einschalten ohne langes Booten der Software betriebsbereit.

[Madawa]

Hier die Lizenznehmer von der NVE-Homepage. Wenn ich das richtig sehe, gibt es vor allem bei Motorola Lizenzgebühren zu holen, Cypress ist Entwicklungspartner und "Serienproduzent".

Wenn ich Infos u.a. von www.heise.de richtig verstanden habe, entwickeln IBM und Infineon unabhängig eigene MRAM-Technologien, ebenso NEC und Toshiba. Wenn ihr was näheres wisst, postet es doch bitte!



www.nve.com

Our Key Technology Licensees

Agilent Technologies, Inc.
Agilent is a major supplier of solid-state couplers, and is now distributing private-labeled versions of our spintronic couplers. We designed and manufacture the couplers to their for Agilent`s specifications.

We signed an agreement with Agilent in 2001 where Agilent prepaid $1.1 million for limited rights to certain aspects of our coupler technology. In 2002 we met key milestones in the qualification of products for Agilent. Agilent introduced the products shortly afterwards.



Cypress Semiconductor Corporation
Cypress is a leading supplier of Static Random Access Memory (SRAM). We signed an agreement with Cypress in 2002 where each party gained rights to the other party`s MRAM intellectual property, Cypress invested in NVE, and agreed to produce MRAM wafers for us under a foundry agreement.

NVE has rights to Cypress Semiconductor`s MRAM designs, rights to modify such designs, and rights to have MRAM manufactured at Cypress Semiconductor`s foundry. We plan to sell devices resulting from the Cypress partnership into niche markets where we have a strong presence such as factory automation or military applications.

Cypress has released preliminary data sheets for 64-kilobit and 256-kilobit MRAMs which are pin-for-pin replacements for their SRAM. In March 2004, Cypress reported it had made working MRAM and was close to production-ready product.



Honeywell
Honeywell has announced plans to develop MRAM for radiation-hardened MRAM for military and aerospace products such as satellites.

NVE was founded with a technology agreement with Honeywell. We will not be paid royalties by Honeywell if they utilize our MRAM intellectual property, and we do not expect to pay royalties to Honeywell for the use of their MRAM intellectual property.



Motorola, Inc.
(Freescale Semiconductor)
Freescale Semiconductor, the semiconductor products sector of Motorola, is a leading global semiconductor company focused on providing embedded processing and connectivity products to large, high-growth markets.

We signed an agreement with Motorola in 1995 giving Motorola the right to license our MRAM intellectual property. Motorola exercised that right in 2000. We received advance payments and we expect to receive royalties under the agreements if and when Motorola begins selling devices using our intellectual property.

In October 2003 Motorola announced it was sampling a 4-megabit MRAM. Motorola has said it expects to begin MRAM pilot production by late 2004.

Our agreement with Motorola has minimum quantities before royalties are paid and ceilings on the royalties we will receive. The agreement provides for royalties only on the portion of die containing our MRAM technology.

[Madawa]

So, und gleich noch was von der NVE-Homepage.



Frequently Asked Questions by Investors

How will you make money from MRAM?
We plan to monetize our MRAM intellectual property in three ways:
1. Royalties after Motorola goes into production,
2. Private-label devices based on Cypress designs, and
3. Additional license agreements, which we expect to be on more favorable terms than existing agreements once the commercial viability of the technology has been demonstrated.

Our MRAM licensing agreements are subject to certain terms, conditions, limitations, and risks which are summarized in our SEC filings.

What is the breakdown of NVE patents by category?
Of our 31 issued U. S. patents, approximately 17 relate to MRAM; the balance relate to sensors, isolators, and other areas.

Where does Cypress stand in commercializing NVE`s intellectual property?
Cypress Semiconductor has made working MRAM using NVE intellectual property, and has said it is very confident that it is close to having a production-ready product.

How does NVE make money from the Cypress partnership?
NVE will get MRAM devices to sell. Under a technology exchange agreement, NVE has rights to Cypress Semiconductor’s MRAM designs, rights to modify such designs, and rights to have MRAM manufactured at Cypress Semiconductor’s foundry.

Is Motorola using your MRAM patents?
We believe the MRAMs Motorola has described publicly contain our intellectual property, but we cannot say with certainty what will be in the products they sell.

Will NVE royalties be prorated for products containing intellectual property in addition to NVE`s intellectual property?
Our MRAM license agreements provide for a full royalty on products containing any of our technology, regardless of whether other intellectual property is used. Our current agreements provide that royalties on products containing more than MRAM (a cell phone on a chip, for example), will be prorated based on the percentage of the die containing MRAM.

What is the ceiling on Motorola royalties?
Our agreement prohibits us from disclosing the ceiling on Motorola license fees.

Who else has MRAM programs other than your licensees?
In addition to our licensees, a number of companies, partnerships, and alliances have announced MRAM programs including Hewlett-Packard, IBM/Infineon, NEC-Toshiba, TSMC, Samsung, Fujitsu, and Sony. None of these are currently NVE licensees.

What is "nano" about your technology?
Nanotechnology is often defined as technology where dimensions of a few nanometers (billionths of a meter) play a critical role. Our designs use one of two nano-scale spintronic structures: giant magnetoresistors or spin-dependent tunnel junctions. Both structures produce a large change in electrical resistance depending on the electron spin orientation in a "free layer." In giant magnetoresistance (GMR) devices, the resistance changes due to conduction electrons scattering at interfaces within the devices. The GMR effect is only significant if the layer thicknesses are less than the mean free path of conduction electrons, which is in the range of five nanometers. NVE`s critical GMR conductor layers are thinner than two nanometers. The second type of spintronic structures we use is called spin-dependent tunnel junctions, also known as SDT junctions, Magnetic Tunnel Junctions (MTJs), or Tunneling Magnetic Junctions (TMJs). SDT junctions use tunnel barriers which must be so thin that electrons can "tunnel" through a normally insulating material to cause a resistance change. The SDT barrier thicknesses are in the range of one to two nanometers.

Are you planning a stock split?
There is some price at which it would make sense to execute a stock split, although we do not have a specific target price.

[Madawa]

Aber hallo,

+17% in Frankfurt...

gibts was neues???

[hooray1]

Na, das war wohl nix, was?
Oder wie sonst soll man den Abschlag von 15% deuten?

NVE Corporation Reports First Quarter Fiscal 2005 Results
EDEN PRAIRIE, Minn.-July 17, 2003-NVE Corporation (NasdaqSC: NVEC) today announced financial results for the three months ended June 30, 2004.

Net income for the first quarter was $483,671 or $0.10 per diluted share, compared to $334,418 or $0.07 per share for the prior-year quarter. Total revenue was $2.89 million, compared to $2.82 million for the prior-year quarter, an increase of 2 percent. Product sales increased 24 percent to $1.36 million from $1.10 million in the prior-year quarter.

Research and development expenses increased 102 percent in the quarter while contract research and development revenue decreased 11 percent as the company shifted resources from government research contracts to company-funded research in order to develop new and improved commercial products.

"We are pleased with our results for the first quarter," commented President and Chief Executive Officer Daniel A. Baker, Ph.D. "Strong product sales in our core industrial markets more than offset an anticipated decline in product sales to St. Jude Medical and a decline in contract research revenue due to stepped-up product development."

"We expect to be profitable in the upcoming quarters but we may post lower net income compared to last year`s quarters due to higher research and development expenses; expenses associated with rolling out MRAM manufactured under our technology agreement with Cypress Semiconductor; and expenses associated with license procurement and enforcement in the current fiscal year," added Baker. "These expenditures will enable NVE`s continued growth and strengthen our intellectual property position."

NVE is a leader in the practical commercialization of spintronics, a nanotechnology which many experts believe represents the next generation of microelectronics. NVE licenses its MRAM intellectual property and sells spintronic products including sensors and couplers to revolutionize data sensing and transmission.

Statements used in this press release that relate to future plans, events, financial results or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others, such factors as uncertainties relating to MRAM production by our licensees, our dependence on Cypress for potential supply of MRAM devices, risks relating to making commercially viable MRAMs, risks in the enforcement of our patents, risks in continued profitability, as well as the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-KSB and other reports filed with the SEC.

[tecdaexchen]

Umsatz: 200 Stück. Noch Fragen??? Wie oft sag ich Euch ihr sollt solche Aktien nicht bestens verkaufen

[hooray1]

Sieht in der Tat an der Wallstreet jetzt doch nicht so düster aus..
Hat wohl einer (erfolgreich) drauf spekuliert, dass jemand Schiss kriegt wie die Zahlen zu bewerten sind und mit fliegenden Fahnen raus geht - koste was es wolle.
Frechheit siegt - immer wieder interessant zu beobachten..