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Beitrag zu dieser Diskussion schreiben
aber aber,
wer wird denn gleich an die Decke gehn,
greife lieber zur HB !!!
wer wird denn gleich an die Decke gehn,
greife lieber zur HB !!!
Antwort auf Beitrag Nr.: 23.380.320 von NikitaChruschtschew am 10.08.06 09:40:15Er ist halt ein Sensibelchen und fühlt sich immer persönlich attackiert. Schade, aber ist so.
Antwort auf Beitrag Nr.: 23.376.890 von wolf4920032000 am 09.08.06 23:34:33Wolf, warum reagierst Du auf den netten Hinweis wie ein HB-Männchen?
Nikita
Nikita
Antwort auf Beitrag Nr.: 23.372.697 von WAlexandro am 09.08.06 18:27:33na und !!!
deshalb ist er hier in englisch !!
-Schlaumeier-
was dagegen,
natürlich, sonst hättest Du ja nicht gemeckert,oder ?
deshalb ist er hier in englisch !!
-Schlaumeier-
was dagegen,
natürlich, sonst hättest Du ja nicht gemeckert,oder ?
<<<AIXTRON participates in European Commission-Funded CHEMAPH Project>>>
Dieser Bericht ist im Nachbachthread auch in deutscher Fassung wiedergegeben.
Dieser Bericht ist im Nachbachthread auch in deutscher Fassung wiedergegeben.
AIXTRON participates in European Commission-Funded CHEMAPH Project
Aachen, Germany, August 9, 2006 - AIXTRON AG is pleased to report its participation in the European Commission-funded CHEMAPH project* which has a duration of two years and is aimed at the development of chalcogenide-based phase change materials.
The consortium carrying out this study consists of three academic and three industrial partners from five European countries, namely CNR (National Lab MDM-INFM), Italy; ST Microelectronics, Italy; Epichem, United Kingdom; Consejo Superior de Investigaciones Cientificas (CSIC), Spain; Vilnius University, Lithuania; and AIXTRON AG, Germany.
AIXTRON's participation in this project is expected to result in the more rapid development and refinement of the range of its MOCVD systems for this materials group. Active for several years in the area of chalcogenides and other demanding materials for the semiconductor and display market sectors, AIXTRON is looking forward to this new collaboration with its European partners. Ultimately, the project is expected to result in a high-performance deposition system to build the foundation of the commercial exploitation of this family of materials in next-generation memory devices.
Recently, the special properties of this material class has generated specific attention for electronic memory applications, due to its success as an optical storage media material. Phase-change memories (PCM) are some of the most promising candidates for next-generation non-volatile memories, having the potential to improve the device performance, compared to Flash memories, as well as being potentially to be scalable beyond the current generation Flash technology for which one outstanding technological issue is the phase-change layer deposition process.
Phase-change films are currently grown by sputtering, a physical vapor deposition technique, which has yielded demonstrator chips for high density memories. However, for continued down-scaling for nanoelectronic device architectures, greater control of film deposition over non-planar structures than is possible with sputtering is necessary. This would allow lower programming currents, leading to improved performance and lower costs.
The project therefore aims at demonstrating the feasibility of a film manufacturing process based on metal-organic chemical vapor deposition (MOCVD). This technique is known to enable the production of thin films with superior quality compared to those obtained by sputtering, especially in terms of conformality, coverage, and stoichiometry control, and it is believed, will allow the implementation of phase-change films in nanoelectronic devices.
The European microelectronics industry has played a competitive role in the field of non-volatile memories, both stand-alone and embedded (e.g. smart cards), and progress in the field of chalcogenide material applications could help give the industry a leading edge in this area.
*CHEMAPH - Chemical Vapor Deposition of Chalcogenide Materials for Phase-change Memories- EU IST Project # 027561. This is a Priority 2 Information Society Technologies Specific Targeted Research or Innovation Project, which started on January 1 this year and will last for two years. It is coordinated by the MDM-INFM National Laboratory of the CNR, Italy. The project goal is to study a chalcogenide system and develop methodologies to fabricate PCMs. The MOCVD technique will require matched precursors to produce films with the correct properties and a wide range of sources will be studied to identify the best combination. Doping issues will also be addressed in the second phase of the project. Optical and electrical properties will be measured to further optimize processes.
Web: http://www.mdm.infm.it/CHEMAPH/summary.html
Aachen, Germany, August 9, 2006 - AIXTRON AG is pleased to report its participation in the European Commission-funded CHEMAPH project* which has a duration of two years and is aimed at the development of chalcogenide-based phase change materials.
The consortium carrying out this study consists of three academic and three industrial partners from five European countries, namely CNR (National Lab MDM-INFM), Italy; ST Microelectronics, Italy; Epichem, United Kingdom; Consejo Superior de Investigaciones Cientificas (CSIC), Spain; Vilnius University, Lithuania; and AIXTRON AG, Germany.
AIXTRON's participation in this project is expected to result in the more rapid development and refinement of the range of its MOCVD systems for this materials group. Active for several years in the area of chalcogenides and other demanding materials for the semiconductor and display market sectors, AIXTRON is looking forward to this new collaboration with its European partners. Ultimately, the project is expected to result in a high-performance deposition system to build the foundation of the commercial exploitation of this family of materials in next-generation memory devices.
Recently, the special properties of this material class has generated specific attention for electronic memory applications, due to its success as an optical storage media material. Phase-change memories (PCM) are some of the most promising candidates for next-generation non-volatile memories, having the potential to improve the device performance, compared to Flash memories, as well as being potentially to be scalable beyond the current generation Flash technology for which one outstanding technological issue is the phase-change layer deposition process.
Phase-change films are currently grown by sputtering, a physical vapor deposition technique, which has yielded demonstrator chips for high density memories. However, for continued down-scaling for nanoelectronic device architectures, greater control of film deposition over non-planar structures than is possible with sputtering is necessary. This would allow lower programming currents, leading to improved performance and lower costs.
The project therefore aims at demonstrating the feasibility of a film manufacturing process based on metal-organic chemical vapor deposition (MOCVD). This technique is known to enable the production of thin films with superior quality compared to those obtained by sputtering, especially in terms of conformality, coverage, and stoichiometry control, and it is believed, will allow the implementation of phase-change films in nanoelectronic devices.
The European microelectronics industry has played a competitive role in the field of non-volatile memories, both stand-alone and embedded (e.g. smart cards), and progress in the field of chalcogenide material applications could help give the industry a leading edge in this area.
*CHEMAPH - Chemical Vapor Deposition of Chalcogenide Materials for Phase-change Memories- EU IST Project # 027561. This is a Priority 2 Information Society Technologies Specific Targeted Research or Innovation Project, which started on January 1 this year and will last for two years. It is coordinated by the MDM-INFM National Laboratory of the CNR, Italy. The project goal is to study a chalcogenide system and develop methodologies to fabricate PCMs. The MOCVD technique will require matched precursors to produce films with the correct properties and a wide range of sources will be studied to identify the best combination. Doping issues will also be addressed in the second phase of the project. Optical and electrical properties will be measured to further optimize processes.
Web: http://www.mdm.infm.it/CHEMAPH/summary.html
Antwort auf Beitrag Nr.: 23.344.814 von der4jaehrige am 07.08.06 19:20:19Sei mir nicht böse. Aber es ist immer wieder schön, Dich zu lesen.
Antwort auf Beitrag Nr.: 23.343.178 von WAlexandro am 07.08.06 17:08:16KLAR WAlex des ist doch schon neh alte kiste aus trader sieht ist wirklich bei 2,75-2,80 wies fricko beschrieben hat ein klarer kauf,die wo bei 2,50 verschlfen haben kommen da zum zug aber des ist dann endgültig der letzte zug wo kommt, die anden brauchen dann esel das sie hinter her kommen
Antwort auf Beitrag Nr.: 23.340.023 von rickmann am 07.08.06 12:33:09wollen die noch billiger rein als dies eh schon möglich ist
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